# US 2013/0241069 A1 · Semiconductor bonding structure body and manufacturing method of semiconductor bonding structure body

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- Number: US 2013/0241069 A1
- Document ID: US20130241069A1
- Status: Published application
- Kind: A1
- Application number: 13/823,463
- Filed: 2011-10-17
- Published: 2013-09-19
- Earliest claimed: 2010-10-22
- Assignees: Panasonic Corporation
- Inventors: Taichi Nakamura; Akio Furusawa; Shigeaki Sakatani; Hidetoshi Kitaura; Yukihiro Ishimaru
- Web page: https://patentgrep.com/patent/US20130241069A1

## CPC

- B23K 1/0016: {Soldering of electronic components}
- B23K 35/0238: {layered}
- B23K 35/26: with the principal constituent melting at less than 400°C
- B23K 35/262: {Sn as the principal constituent}
- B23K 35/3006: {Ag as the principal constituent}
- B23K 35/3013: {Au as the principal constituent}
- B23K 35/302: {Cu as the principal constituent}
- B32B 15/018: {one layer being formed of a noble metal or a noble metal alloy}
- C22C 5/02: Alloys based on gold
- C22C 5/06: Alloys based on silver
- C22C 9/00: Alloys based on copper
- C22C 9/02: with tin as the next major constituent
- C22C 13/00: Alloys based on tin
- H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W 72/30: Die-attach connectors
- H10W 74/012: {of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- B22F 2999/00: Aspects linked to processes or compositions used in powder metallurgy
- B23K 2101/40: Semiconductor devices
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 72/01325: {in solid form}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/07341: {Controlling the bonding environment, e.g. atmosphere composition or temperature}
- H10W 72/07355: {changes in materials}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/3528: {Intermetallic compounds}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER

## Abstract

A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.

## Claims

### Claim 1

A semiconductor bonding structure body in which, on a substrate electrode, a first intermetallic compound layer that contains Sn, a third layer that is constituted by a third intermetallic compound part containing Sn and a phase containing Sn, and a second intermetallic compound layer that contains Sn are overlaid in order, and an electrode of a semiconductor element is placed thereon, wherein
the first intermetallic compound layer and the second intermetallic compound layer have parts that allow interlayer bonding via the third intermetallic compound part.

### Claim 2 (depends on 1)

A semiconductor bonding structure body according to claim 1, wherein
the third intermetallic compound part is shaped like sticks.

### Claim 3 (depends on 1)

A semiconductor bonding structure body according to claim 1, wherein
the first intermetallic compound layer is constituted by an intermetallic compound that is made of CuSn,
the second intermetallic compound layer is constituted by an intermetallic compound that is made of CuSn,
the third intermetallic compound part is constituted by an intermetallic compound that is made of any one of AuSn and Ag—Sn, and
the phase containing Sn contains any one of Au and Ag.

### Claim 4 (depends on 1)

A semiconductor bonding structure body according to claim 1, wherein
the first intermetallic compound layer is constituted by an intermetallic compound that is made of AgSn,
the second intermetallic compound layer is constituted by an intermetallic compound that is made of AgSn,
the third intermetallic compound part is constituted by an intermetallic compound that is made of AuSn, and
the phase containing Sn contains any one of Au and Ag.

### Claim 5

A manufacturing method of a semiconductor bonding structure body, comprising:
a semiconductor-element-surface metallic film forming step of forming, on an electrode surface of a semiconductor element, a metallic film that forms an intermetallic compound with Sn;
an electrode-surface metallic film forming step of forming, on a substrate electrode surface, a metallic film that forms an intermetallic compound with Sn; and
a bonding step where, while an electrode face of the semiconductor element, on which the metallic film has been formed, is allowed to face a face of the substrate electrode, on which the metallic film has been formed, and bonding via a solder material containing Sn is carried out between the faces allowed to face each other, a first intermetallic compound layer that is formed on the face of the substrate electrode and a second intermetallic compound layer that is formed on the electrode face of the semiconductor element are, by a third intermetallic compound part that is formed by the solder material containing Sn, partly interlayer-bonded.

### Claim 6 (depends on 5)

A manufacturing method of a semiconductor bonding structure body according to claim 5, wherein a material of the metallic film formed on a surface of the semiconductor element is any one of Ag and Cu or a combination of Ag and Cu,
a material of the metallic film formed on a surface of the electrode is any one of Au and Ag or a combination of Au and Ag, and
the solder material containing Sn is Sn3 wt % Ag-0.5 wt % Cu.