# US 2013/0240902 A1 · Semiconductor Arrangement > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0240902 A1 - Document ID: US20130240902A1 - Status: Published application - Kind: A1 - Application number: 13/419,469 - Filed: 2012-03-14 - Published: 2013-09-19 - Earliest claimed: 2012-03-14 - Assignees: Infineon Technologies AG - Inventors: Hans-Joachim Schulze; Manfred Kotek; Johannes Baumgartl; Markus Harfmann; Christian Krenn; Thomas Neidhart - Web page: https://patentgrep.com/patent/US20130240902A1 ## CPC - H10D 30/66: Vertical DMOS [VDMOS] FETs - H10D 30/0291: {of vertical DMOS [VDMOS] FETs} - H10D 62/111: {Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures} - H10D 62/156: {Drain regions of DMOS transistors} - H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)} - H10D 62/832: being Group IV materials comprising two or more elements, e.g. SiGe - H10D 62/834: further characterised by the dopants - H10D 62/854: further characterised by the dopants - H10P 32/14: within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase - H10P 32/171: {being group IV material} - H10P 72/74: {using temporarily an auxiliary support} - H10D 62/157: {Impurity concentrations or distributions} - H10D 62/8325: {Silicon carbide} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10P 72/7424: {used as a support during the manufacture of self-supporting substrates} - H10P 95/906: {for altering the shape of semiconductors, e.g. smoothing the surface} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second dopants are different substances and also different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes either a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone. The second dopant may be electrically active, and may be of the same doping type as the first dopant, causes one or both of: a hardening of the first semiconductor zone; an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively. ## Claims ### Claim 1 A semiconductor arrangement comprising a first semiconductor zone of a first conduction type, wherein the first semiconductor zone comprises a semiconductor base material doped with a first dopant and a second dopant, wherein: the first and second dopants are made of different substances; the first and second dopants are made of substances which are both different from the semiconductor base material; the first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material; the first dopant causes a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone; the second dopant causes one or both of: a hardening of the first semiconductor zone; and an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively. ### Claim 2 (depends on 1) The semiconductor arrangement of claim 1, wherein the first semiconductor zone is arranged on a semiconductor carrier. ### Claim 3 (depends on 2) The semiconductor arrangement of claim 2, wherein the semiconductor carrier consists of or comprises a second semiconductor zone of a second conduction type which is complementary to the first conduction type. ### Claim 4 (depends on 2) The semiconductor arrangement of claim 2, wherein the semiconductor carrier consists of or comprises a second semiconductor zone of a second conduction type which is identical to the first conduction type. ### Claim 5 (depends on 1) The semiconductor arrangement of claim 1, wherein the semiconductor base material is silicon (Si), silicon carbide (SiC), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), a ternary compound semiconductor, or a quaternary compound semiconductor. ### Claim 6 (depends on 1) The semiconductor arrangement of claim 1, wherein the first semiconductor zone is n-doped and comprises one of the following combination of dopants: P and As; P and As and Sb; As and Sb; P, As and one or an arbitrary combination of C, Ge, Sn; P, As and Sb, and one or an arbitrary combination of C, Ge, Sn; As and Sb, and one or an arbitrary combination of C, Ge, Sn; P and one or an arbitrary combination of C, Ge, Sn; As and one or an arbitrary combination of C, Ge, Sn; and Sb and one or an arbitrary combination of C, Ge, Sn. ### Claim 7 (depends on 1) The semiconductor arrangement of claim 1, wherein the first semiconductor zone comprises one of the following hardening dopants or combinations of hardening dopants: O; N; O and N. ### Claim 8 (depends on 7) The semiconductor arrangement of claim 7, wherein the first semiconductor zone comprises nitrogen (N) with an average concentration of 2·1014 to 5·1015 nitrogen atoms/cm3, or of 5·1014 to 2·1015 nitrogen atoms/cm3. ### Claim 9 (depends on 1) The semiconductor arrangement of claim 1, wherein the first semiconductor zone comprises both N and P as dopants. ### Claim 10 (depends on 1) The semiconductor arrangement of claim 1, wherein the first semiconductor zone is p-doped and comprises one of the following combinations of dopants: B and one or an arbitrary combination of Al, Ga, In; B and one or both of Ge, Sn; and B, one or an arbitrary combination of Al, Ga, In, and one or both of Ge, Sn. ### Claim 11 (depends on 10) The semiconductor arrangement of claim 10, wherein the first semiconductor zone comprises C. ### Claim 12 (depends on 1) The semiconductor arrangement of claim 1, wherein the first semiconductor zone has, in a lateral direction, a dimension of at least 200 mm, or of at least 250 mm, or of at least 300 mm, or of at least 450 mm. ### Claim 13 (depends on 12) The semiconductor arrangement of claim 12, wherein the first semiconductor zone has, in a vertical direction which is perpendicular to the lateral direction, a thickness in the range from 50 μm to 200 μm, or in the range from 60 μm to 180 μm. ### Claim 14 (depends on 3) The semiconductor arrangement of claim 3, wherein the second conduction type is p and wherein the semiconductor carrier comprises Boron (B). ### Claim 15 (depends on 14) The semiconductor arrangement of claim 14, wherein the first semiconductor zone and the second semiconductor zone directly abut, thereby forming a pn-junction. ### Claim 16 (depends on 2) The semiconductor arrangement of claim 2, wherein: the first semiconductor zone comprises a bottom side facing the semiconductor carrier; the first semiconductor zone comprises a top side facing away from the semiconductor carrier; and the first dopant comprises, starting from the bottom side away from the semiconductor carrier in a vertical direction that runs perpendicular to the bottom side, a concentration that gradually decreases towards the top side of the heavily n-doped semiconductor zone 1; or that firstly gradually increases and then decreases towards the top side. ### Claim 17 (depends on 2) The semiconductor arrangement of claim 2, wherein the first semiconductor zone comprises: a bottom side facing the semiconductor carrier; a top side facing away from the semiconductor carrier; a thickness; and a dopant concentration which is, starting from the bottom side away from the semiconductor carrier in a vertical direction up to a first distance from the bottom side, substantially constant and then gradually decreases towards the top side; wherein the first distance is between 40% and 80% of the thickness of the first semiconductor zone, and wherein the dopant concentration at the first distance is less than or equal to 50%, less than or equal to 30% or less than or equal to 10% of the dopant concentration at the bottom side. ### Claim 18 (depends on 17) The semiconductor arrangement of claim 17, wherein the first dopant is phosphorus (P). ### Claim 19 (depends on 2) The semiconductor arrangement of claim 2, wherein: a semiconductor component is arranged on the carrier; the semiconductor component comprises a source or collector semiconductor region, and an n-doped drain or emitter semiconductor region; and the n-doped drain region is formed from the first semiconductor zone. ### Claim 20 A method for producing a semiconductor arrangement, comprising: providing a semiconductor carrier of a second conduction type; epitaxially growing a first semiconductor zone of a first conduction type complementary to the second conduction type on the semiconductor carrier, wherein: the first semiconductor zone comprises a semiconductor base material doped with a first dopant and with a second dopant; the first dopant and the second dopant are made of different substances; the first dopant and the second dopant are made of substances which are both different from the semiconductor base material; the first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material; the first dopant causes a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone; the second dopant causes one or both of: a hardening of the first semiconductor zone; and an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and, a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively. ### Claim 21 (depends on 20) The method as claimed in claim 20, wherein the semiconductor carrier consists of or comprises a second semiconductor zone of a second conduction type which is complementary to the first conduction type or identical to the first conduction type. ### Claim 22 (depends on 20) The method as claimed in claim 20, wherein the carrier is removed from the first semiconductor zone. ### Claim 23 (depends on 20) The method as claimed in claim 20, wherein: the base material is silicon (Si) or silicon carbide (SiC); and the first semiconductor zone comprises as dopants at least one of: arsenic (As); phosphorus (P); antimony (Sb); nitrogen (N); oxygen (O); and germanium (Ge). ### Claim 24 (depends on 22) The method as claimed in claim 22, wherein, prior to the removal of the carrier, a semiconductor component is formed on the carrier, and wherein the first semiconductor zone or a part of the first semiconductor zone forms a part of the semiconductor component. ### Claim 25 (depends on 24) The method as claimed in claim 24, wherein the semiconductor component comprises an n-doped drain which is formed from the first semiconductor zone. ### Claim 26 (depends on 20) The method as claimed in claim 20, wherein: an epitaxial layer of the same conduction type as the first semiconductor zone is grown on that side of the first semiconductor zone facing away from the semiconductor carrier; and a field stop zone is formed in the epitaxial layer by a diffusion of electrically active dopants of the first semiconductor zone into the epitaxial layer, wherein a drift zone directly abuts the field stop zone on that side of the field stop zone facing away from the first semiconductor zone. ### Claim 27 (depends on 26) The method as claimed in claim 26, wherein: the first semiconductor zone comprises P and As as dopants; the field stop zone comprises P and As as dopants; the drift zone comprises at least P and optionally As as dopants; and the drift zone comprises a section spaced distant from the first semiconductor zone and free of As.