# US 2013/0240352 A1 · Sputtering Target

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- Number: US 2013/0240352 A1
- Document ID: US20130240352A1
- Status: Published application
- Kind: A1
- Application number: 13/989,251
- Filed: 2011-11-28
- Published: 2013-09-19
- Earliest claimed: 2010-11-29
- Assignees: Mitsui Mining & Smelting Co., Ltd.
- Inventors: Makoto Ikeda
- Web page: https://patentgrep.com/patent/US20130240352A1

## CPC

- G11B 5/851: Coating a support with a magnetic layer by sputtering
- C22C 33/0278: {with at least one alloying element having a minimum content above 5%}
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- B22F 2998/10: Processes characterised by the sequence of their steps
- H01F 41/183: {Sputtering targets therefor}
- G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES

## Abstract

Provided is a sputtering target characterized by containing Ag and C. The sputtering target contains Ag in addition to Fe, Pt and C. By allowing the sputtering target to contain Ag, the sputtering target has high density. As a result, when the sputtering target is placed in a vacuum atmosphere in the sputtering process, the amount of a gas emitted from the sputtering target can be reduced, and the properties of a thin film formed by sputtering can be improved. Moreover, even when the sputtering target is produced by low-temperature sintering, it has high density.

## Claims

### Claim 1

A sputtering target containing Fe, Pt, Ag and C.

### Claim 2 (depends on 1)

The sputtering target as claimed in claim 1, wherein the ratio of the content of Ag to the total content of Fe, Pt and Ag is 1 to 20% by mol.

### Claim 3 (depends on 1)

The sputtering target as claimed in claim 1, which is produced by calcining a raw material powder containing Fe powder, Pt powder, Ag powder and C powder.

### Claim 4 (depends on 1)

The sputtering target as claimed in claim 1, which has a density of not less than 90%.

### Claim 5 (depends on 2)

The sputtering target as claimed in claim 2, which is produced by calcining a raw material powder containing Fe powder, Pt powder, Ag powder and C powder.

### Claim 6 (depends on 5)

The sputtering target as claimed in claim 5, which has a density of not less than 90%.

### Claim 7 (depends on 2)

The sputtering target as claimed in claim 2, which has a density of not less than 90%.

### Claim 8 (depends on 3)

The sputtering target as claimed in claim 3, which has a density of not less than 90%.