N-channel flow ratio controller calibration
AssigneeApplied Materials, Inc.
InventorsMariusch GREGOR, John W. LANE
Life of this patent
Estimating the term…
Loading patent…
AssigneeApplied Materials, Inc.
InventorsMariusch GREGOR, John W. LANE
Estimating the term…
Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.
A method of calibrating a flow ratio controller for a tandem chamber having two process chambers, each process chamber having a gas diffuser comprising multiple gas zones disposed therein, each gas zone of each gas diffuser coupled to the same process gas supply, comprising:
A method of calibrating a flow ratio controller for a tandem chamber having two process chambers, each process chamber having a gas diffuser comprising multiple gas zones disposed therein, each gas zone of each gas diffuser coupled to the same process gas supply, comprising:
Dependencies are inferred from the claim text.