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US 2013/0230985 A1Published application
Three-Dimensional System-in-Package Architecture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsOscar M.K. Law, Kuo H. Wu
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Abstract
A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. A semiconductor die is manufactured with both via-first TSVs as well as via-last TSVs in order to establish low resistance paths for die connections between adjacent dies as well as for providing a low resistance path for feedthrough channels between multiple dies.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- providing a first substrate;
- forming one or more first dielectric layers and one or more first metallization layers over the first substrate;
- forming a first conductive via through the first substrate and the one or more first dielectric layers and in contact with at least one of the one or more first metallization layers;
- forming a plurality of second dielectric layers over the one or more first dielectric layer and the first conductive via;
- and
- forming a second conductive via through the first substrate, the one or more first dielectric layers, and the plurality of second dielectric layers such that the second conductive via has a first end terminating at a first side of the semiconductor device and a second end terminating at a second side of the semiconductor device.
3 more elements
A method of manufacturing a semiconductor die, the method comprising:
- forming a first plurality of dielectric layers over a first side of a semiconductor substrate;
- forming a second plurality of dielectric layers over the first plurality of dielectric layers;
- forming a first through substrate via to extend through the semiconductor substrate and at least one of the first plurality of dielectric layers, the first through substrate via terminating at a first conductive material located within the first plurality of dielectric layers;
- and
- forming a second through substrate via to extend through the semiconductor die.
2 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming at least one metallization layer over a substrate, the substrate comprising a semiconductor material;
- forming a first conductive via through the substrate, the conductive via ending at the at least one metallization layer;
- depositing one or more dielectric layers over the at least one metallization layer;
- and
- forming a second conductive via through the substrate and the one or more dielectric layers to have ends on multiple sides of the semiconductor device.
2 more elements
Dependencies are inferred from the claim text.