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US 2013/0230976 A1Published application
Flat panel display device comprising polysilicon thin film transistor and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsJi-Yong PARK, Jae-Bon Koo, Hye-Hyang Park, Ki-Yong Lee, Ul-Ho Lee
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Abstract
The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.
Claims5
A method of manufacturing a flat panel display device, comprising:
- forming an amorphous silicon film;
- and
- crystallizing the amorphous silicon film with a laser to form a polysilicon film, wherein irradiated energy of the laser on the amorphous silicon layer in an active channel region of a pixel portion is smaller than irradiated energy of the laser on the amorphous silicon layer in an active channel region of a driving circuit portion.
Dependencies are inferred from the claim text.