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US 2013/0230975 A1Published application
Method of forming a germanium thin film
AssigneeTokyo Electron Limited
InventorsAkinobu KAKIMOTO, Shigeru NAKAJIMA, Kazuhide HASEBE
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Abstract
A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas.
Claims10
A method of forming a germanium thin film on an underlying film, the method comprising:
- forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas;
- and
- forming a germanium thin film on the germanium seed layer using a germane-based gas.
Dependencies are inferred from the claim text.