Mask and method of manufacturing array substrate using the same

A method of manufacturing an array substrate, the method comprising:

• forming gate wiring and gate electrodes connected to the gate wiring, on a base substrate;
• coating amorphous silicon layers on the gate electrodes;
• disposing a mask at different positions over the substrate, the mask comprising a central area, a peripheral area disposed around the central area, and lenses disposed in the central area and the peripheral area;
• irradiating the amorphous silicon layers through the mask, while the mask is at each of the positions, to sequentially crystallize the amorphous silicon layers;
• and
• forming source electrodes and drain electrodes on the crystallized silicon layers,
• wherein the peripheral area is disposed above a group of the same semiconductor layers, while the mask is in a first one of the positions and in a second one of the positions.