Ruthenium film formation method and computer readable storage medium
AssigneeTokyo Electron Limited
InventorsYumiko KAWANO, Hideaki YAMASAKI, Susumu ARIMA
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Abstract
A ruthenium film formation method includes placing and heating a substrate inside a process chamber, and supplying a ruthenium compound gas and a decomposing gas for decomposing this compound into the process chamber while periodically modulating at least one of flow rates of these gases, to form a plurality of steps having gas compositions different from each other. Without purging an interior of the process chamber between these steps, the method includes causing the gases to react with each other on the substrate thus heated, thereby forming a ruthenium film on the substrate.
Claims9
A ruthenium film formation method comprising:
- placing and heating a substrate inside a process chamber;
- supplying a ruthenium compound gas and a decomposing gas for decomposing this compound into the process chamber while periodically modulating at least one of flow rates of these gases, to form a plurality of steps having gas compositions different from each other, without purging an interior of the process chamber between these steps;
- and causing the gases to react with each other on the substrate thus heated, thereby forming a ruthenium film on the substrate.
Dependencies are inferred from the claim text.