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US 2013/0230643 A1Published application
Atomic layer deposition encapsulation for acoustic wave devices
AssigneeRF Micro Devices, Inc.
InventorsMerrill Albert Hatcher, JR., Jayanti Jaganatha Rao, John Robert Siomkos
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Abstract
Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
Claims10
A method of forming a film of a plurality of monolayers on a surface of an acoustic wave device, comprising:
- providing the acoustic wave device within a reaction chamber;
- implementing a plurality of layer deposition cycles within the reaction chamber to form the plurality of monolayers of the film, wherein each of the plurality of layer deposition cycles, comprises:
- introducing a first precursor within the reaction chamber during a first time period to form one of the plurality of monolayers wherein the first precursor comprises a trimethyaluminum gas and the one of the plurality of monolayers comprises methyaluminoxane;
- and
- introducing a second precursor within the reaction chamber during a second time period, the second precursor reacting with the methyaluminoxane so that the one of the plurality of monolayers comprises alumina and a surface that is hydroxilated.
2 more elements
Dependencies are inferred from the claim text.