Joined body, power semiconductor device, and manufacturing methods of joined body and power semiconductor device
AssigneePanasonic Corporation
InventorsMasanori Minamio, Tatsuo Sasaoka
Life of this patent
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Abstract
First, an aqueous solution (103) containing an oxide film remover is disposed on a junction region of a first metal plate (101). Then, with the aqueous solution (103) remaining on the first metal plate (101), a second metal plate (102) is placed on the first metal plate (101). Thereafter, a load is applied to junction regions of the first metal plate (101) and the second metal plate (102) in the vertical direction, thereby joining the first metal plate (101) and the second metal plate (102) together to form a junction portion (110). In this manner, a joined body is manufactured.
Claims20
A manufacturing method of a joined body, comprising
- disposing a solution containing an oxide film remover on a junction region of a first junction target member made of a metal, and then placing a second junction target member made of a metal on the first junction target member;
- and
- applying a load to the junction region of the first junction target member, thereby joining the first junction target member and the second junction target member together to form a joined body, wherein
- the oxide film remover is potassium hydroxide, and
- a concentration of potassium hydroxide as the oxide film remover in the solution is less than or equal to 2%.
(canceled)
A joined body, wherein
- an anti-corrosion film is formed around a junction portion formed by a first junction target member and a second junction target member each made of a metal.
Dependencies are inferred from the claim text.