Through silicon via noise suppression using buried interface contacts
AssigneeInternational Business Machines Corporation
InventorsXiaomin Duan, Xiaoxiong Gu, Yong Liu, Joel A. Silberman
Life of this patent
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Abstract
Circuits for shielding devices from electromagnetic coupling with through-silicon vias are shown that include a substrate having a through via, which provides access to a device layer on a first surface of the circuit to a device layer on a second surface of the circuit; a conductive layer on the first side of the substrate; a contact point on one of the device layers; and a grounded buried interface tie on the conductive layer, adjacent to the contact point, to isolate the contact point from coupling noise.
Claims25
A circuit, comprising:
- a substrate having a through via that provides access to a device layer on a first surface of the circuit to a device layer on a second surface of the circuit;
- a conductive layer on a first side of the substrate;
- a contact point on one of the device layers;
- and
- a grounded buried interface tie on the conductive layer, disposed adjacent to the contact point, to isolate the contact point from coupling noise.
A circuit, comprising:
- a substrate comprising:
- a through via that provides access to a device layer on a first surface of the circuit to a device layer on a second side of the circuit;
- and
- a ground via;
- a conductive layer on a first side of the substrate;
- a contact point on one of the device layers;
- and
- a buried interface tie in contact with the conductive layer and connected to the ground via, disposed adjacent to the contact point to isolate the contact point from coupling noise.
A three-dimensional circuit, comprising:
- a base substrate;
- and
- a package on the base substrate that supports one or more circuit stacks, each stack comprising:
- a plurality of circuit layers, at least one of said circuit layers having one or more through vias that provide access to components on a first side of a circuit layer to components on a second side of the circuit layer;
- a conductive layer on the first side of the circuit layer;
- a contact point above the conductive layer;
- and
- a grounded buried interface tie on the conductive layer, disposed adjacent to the contact point, to isolate the contact point from coupling noise.
A method for forming a circuit, comprising:
- forming a substrate with an active device layer on each side comprising at least one contact point;
- forming a through via that penetrates the substrate and connects the active device layer on each side to one another, providing an electrical connection between the active device layers on each side;
- forming a conductive layer between the substrate and the active device layer;
- and
- forming at least one grounded buried interface tie that penetrates the active device layer to contact the conductive layer.
Dependencies are inferred from the claim text.