Semiconductor light emitting element array

An automotive lighting comprising:

• a light source including;
• a support substrate, a plurality of semiconductor light emitting elements disposed on said support substrate, wherein a pair of adjacent semiconductor light emitting elements are separated by street, and each of the semiconductor light emitting elements includes a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination, and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of a street between a pair of adjacent semiconductor laminations;
• and
• an optical system that projects images of the light source on a projection surface.

A method of manufacturing a semiconductor light emitting element array comprising steps of:

• (a) growing on a growth substrate an initial growth layer having electrical insulating property and optical propagating property;
• (b) growing semiconductor lamination including a first semiconductor layer of a first conductivity type on the initial growth layer, an active layer on the first semiconductor layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type on the active layer;
• (c) selectively forming a first electrode on a surface of the second semiconductor layer, forming a first adhesion layer covering the first electrode, defining a first region of the semiconductor lamination covered by the first adhesion layer and a second region of the semiconductor lamination where the second semiconductor layer is exposed;
• (d) removing the second region of the semiconductor lamination to expose the initial growth layer, and leave the first region of the semiconductor lamination;
• (e) forming a second adhesion layer selectively on a support substrate;
• (f) adhering the growth substrate and the support substrate in such a manner that the first adhesion layer and the second adhesion layer are brought into contact each other, melt-adhering the first and second adhesion layers, to form a joined structure including the semiconductor lamination and the support substrate;
• (g) removing the growth substrate from the joined structure to expose the initial growth layer;
• (h) removing the exposed initial growth layer in area corresponding to the first region of the semiconductor lamination to expose the first semiconductor layer and leave the initial growth layer in area corresponding to the second region of the semiconductor lamination;
• (i) selectively forming a second electrode on the exposed first semiconductor layer.