Substrate mounting table and plasma etching apparatus

A plasma etching apparatus comprising:

• a processing chamber which is evacuable to a vacuum atmosphere;
• an etching gas supply unit configured to supply an etching gas into the processing chamber;
• a gas exhaust unit configured to evacuate an inside of the processing chamber;
• a plasma generating unit configured to generate plasma of the etching gas;
• and
• a substrate mounting table that is disposed within the processing chamber and configured to hold a substrate thereon,
• wherein the substrate mounting table comprises:
• an insulating member having therein an electrostatic chuck electrode configured to attract a substrate and a temperature controlling heater electrode;
• a plate-shaped temperature controlling member having therein a temperature controlling medium path through which a temperature controlling medium is circulated;
• a cylindrical member made of an insulating material and provided within a through hole formed in the plate-shaped temperature controlling plate-shaped member;
• and
• a lead line, provided within the cylindrical member, having one end connected to a first electrode terminal fastened to the temperature controlling heater electrode and the other end connected to a second electrode terminal provided at a bottom surface side of the cylindrical member.