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US 2013/0220417 A1Published application
Solar cell
AssigneeSanyo Electric Co., Ltd.
InventorToshiaki BABA
Life of this patent
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Abstract
A solar cell includes a crystalline Si layer including a pn junction and a semiconductor layer formed on a first main surface of the crystalline Si layer. The semiconductor layer has the same conductivity as a portion of the crystalline Si layer that is in contact with the semiconductor layer. The open circuit voltage under light irradiation onto the solar cell is different from a level difference between the quasi Fermi level of electrons and the quasi Fermi level of holes in the crystalline Si layer.
Claims7
A solar cell comprising:
- a crystalline silicon layer including a pn junction;
- and
- a semiconductor layer formed on a first main surface of the crystalline silicon layer, wherein
- the semiconductor layer has the same conductivity type as a portion of the crystalline silicon layer that is in contact with the semiconductor layer, and
- an open circuit voltage under light irradiation onto the solar cell is different from a level difference between a quasi Fermi level of electrons and a quasi Fermi level of holes in the crystalline silicon layer.
2 more elements
A solar cell comprising:
- a crystalline silicon layer including a pn junction;
- and
- a semiconductor layer formed on a first main surface of the crystalline silicon layer and made of an amorphous semiconductor containing hydrogen, wherein
- the semiconductor layer contains a dopant of the same conductivity type as a portion of the crystalline silicon layer that is in contact with the semiconductor layer, and
- the dopant concentration of the semiconductor layer in the vicinity of an interface with the crystalline silicon layer is 1×1019/cc or higher.
2 more elements
Dependencies are inferred from the claim text.