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US 2013/0200329 A1Published application
Memory cell device and method of manufacture
AssigneesAdesto Technologies Corporation, Artemis Acquisition LLC
InventorSandra Mege
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Abstract
According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material and first metal species dispersed in the intercalating material.
Claims20
A memory cell, comprising:
- an anode electrode comprising a layer of an inorganic intercalating material and at least a first metal species dispersed in the inorganic intercalating material;
- a cathode electrode;
- and
- a solid state electrolyte formed between the anode and cathode electrodes, wherein the solid state electrolyte is programmable between different resistance values by electric pulsing.
1 more element
An integrated circuit device, comprising:
- a plurality of memory cells, each memory cell comprising
- a cathode electrode,
- a solid electrolyte layer, and
- an anode electrode that includes
- an inorganic intercalating material, and
- a first metal species dispersed in the inorganic intercalating material;
- wherein
- each memory cell is switchable between different resistance values by bipolar electric pulsing.
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A method, comprising:
- forming a cathode electrode;
- forming an anode electrode comprising an inorganic intercalating material and at least a first metal species dispersed in the inorganic intercalating material;
- and forming a solid electrolyte layer between the cathode electrode and the anode electrode;
- wherein the solid electrolyte layer is programmable between different resistance values by electric pulsing.
1 more element
Dependencies are inferred from the claim text.