Resistive Memory Arrangement and a Method of Forming the Same
AssigneeAgency for Science, Technology and Research
InventorsXinpeng WANG, Xiang LI, Navab SINGH, Guo-Qiang Patrick LO
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Abstract
According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided.
Claims20
A resistive memory arrangement comprising:
- a nanowire;
- and
- a resistive memory cell comprising:
- a resistive layer comprising a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire;
- and
- a conductive layer arranged on at least a part of the resistive layer.
A resistive memory arrangement comprising:
- a plurality of nanowires;
- and
- a plurality of resistive memory cells, wherein each resistive memory cell of the plurality of resistive memory cells comprises
- a resistive layer comprising a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of a respective nanowire of the plurality of nanowires;
- and
- a conductive layer arranged on at least a part of the resistive layer;
- and
- a plurality of conductive lines electrically coupled to the plurality of nanowires and the plurality of resistive memory cells.
A method of forming a resistive memory arrangement, the method comprising:
- forming a nanowire;
- forming a resistive layer comprising a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire;
- and
- forming a conductive layer on at least a part of the resistive layer.
Dependencies are inferred from the claim text.