Multifunctional electrode

A method of forming a nonvolatile memory element the method comprising;

• forming a first layer, wherein the first layer is operable as a first electrode;
• forming a second layer,
• wherein the second layer is operable as a resistive switching layer,
• wherein the second layer comprises a compound comprising Me1vMe2wSixOyNz, where Me1 and Me2 are metals, v≧0, w≧0, x≧0, y>0, and z≧0, and at least one of v, w, and x is greater than zero,
• wherein the compound has near-stoichiometric composition and bistable resistance;
• and
• forming a third layer, wherein the third layer is operable as a second electrode;
• wherein the second layer is disposed between the first and third layers;
• wherein at least one of the first and third layers is a layer comprising a sub-stoichiometric nitride or sub-stoichiometric oxynitride, and having a resistivity between 0.1 and 10 Ω cm. and
• wherein the substoichiometric nitride or substoichiometric oxynitride is formed by reactive sputtering in an atmosphere comprising nitrogen or a combination of nitrogen and oxygen.