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US 2013/0200322 A1Published application
Memory arrays and methods of forming the same
AssigneeMicron Technology, Inc.
InventorsRoberto Somaschini, Fabio Pellizzer, Carmela Cupeta, Nicola Nastasi
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Abstract
Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.
Claims26
A method for forming a memory array, comprising:
- forming a substrate structure including array circuitry;
- forming a number of vias in the substrate structure such that a number of portions of the array circuitry are exposed;
- and
- forming a conductive material in the number of vias and on the substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.
1 more element
A method for forming a memory array, comprising:
- forming a substrate structure including array circuitry;
- forming a via in the substrate structure such that a portion of the array circuitry is exposed;
- forming a combined conductive plug/conductive line by forming a conductive material in the via and on the substrate structure such that there is not an interface between a plug portion and a line portion of the combined conductive plug/conductive line;
- forming a material stack on the conductive material;
- and
- defining a number of conductive lines of the array by removing portions of the material stack and portions of the conductive material formed on the substrate structure.
3 more elements
A memory array, comprising:
- a memory cell comprising a select device and a resistive storage element (RSE) formed between a first conductive line and a second conductive line;
- and
- a conductive plug coupling the first conductive line to array circuitry;
- wherein the conductive plug and the first conductive line are formed of a continuous conductive material, such that an interface does not exist between the conductive plug and the first conductive line.
1 more element
A memory array, comprising:
- a memory cell comprising a select device and a resistive storage element (RSE) formed between a first conductive line and a combined conductive plug/conductive line;
- and
- the combined conductive plug/conductive line including:
- a plug portion formed in a via and coupling to array circuitry;
- and a line portion serving as at least one of:
- a word line and a bit line of the array;
- wherein the combined conductive plug/conductive line is formed of a continuous conductive material, such that an interface does not exist between the plug portion and the line portion of the combined conductive plug/conductive line.
4 more elements
Dependencies are inferred from the claim text.