Antenna unit for inductively coupled plasma, inductively coupled plasma processing apparatus and method therefor

An inductively coupled plasma processing apparatus for performing an inductively coupled plasma processing on a substrate, comprising:

• a processing vessel;
• a dielectric wall configured to partition the processing vessel to form a processing chamber in which the substrate is processed in the processing vessel, the dielectric wall constituting a ceiling wall of the processing chamber;
• a mounting table on which the substrate is mounted and installed in the processing chamber;
• an antenna unit disposed above the dielectric wall and including an antenna configured to generate an inductively coupled plasma within the processing chamber;
• and
• a high frequency power supply unit configured to supply a high frequency power to the antenna,
• wherein the antenna includes planar sections which are formed to face a top surface of the dielectric wall and the substrate, and to generate an induction electric field that contributes to generate the inductively coupled plasma,
• wherein a plurality of antenna segments having planar portions which form a portion of the planar sections are arranged to constitute the planar sections, and
• wherein the antenna segments are constituted by winding an antenna line in a direction intersecting with the substrate in a longitudinal and spiral pattern.

An inductively coupled plasma processing apparatus for performing an inductively coupled plasma processing on a substrate, comprising:

• a processing vessel;
• a metal wall configured to partition the processing vessel to form a processing chamber in which the substrate is processed in the processing vessel, the metal wall constituting a ceiling wall of the processing chamber and being insulated from the processing vessel;
• a mounting table on which the substrate is mounted and installed in the processing chamber;
• an antenna unit disposed above the metal wall and including an antenna configured to generate an inductively coupled plasma within the processing chamber;
• and
• a high frequency power supply unit configured to supply a high frequency power to the antenna,
• wherein the antenna includes planar sections which are formed to face a top surface of the metal wall and the substrate, and to generate an induction electric field that contributes to generate the inductively coupled plasma,
• wherein a plurality of antenna segments having planar portions which form a portion of the planar sections are arranged to constitute the planar sections, and
• wherein the antenna segments are constituted by winding an antenna line in a direction intersecting with the substrate in a longitudinal and spiral pattern.

A method of performing an inductively coupled plasma processing using an inductively coupled plasma processing apparatus, the method comprising:

• performing an inductively coupled plasma processing on a substrate,
• wherein the inductively coupled plasma processing apparatus includes:
• a processing chamber configured to receive the substrate therein and configured to process the substrate with plasma;
• a mounting table on which the substrate is mounted and installed in the processing chamber;
• an antenna unit including an antenna configured to generate an inductively coupled plasma within the processing chamber;
• and
• a high frequency power supply unit configured to supply a high frequency power to the antenna,
• wherein the antenna includes planar sections which are formed to face the substrate and generate an induction electric field that contributes to generate the inductively coupled plasma,
• wherein a plurality of antenna segments having planar portions which form a portion of the planar sections are arranged to constitute the planar sections,
• wherein the antenna segments are constituted by winding an antenna line in a direction intersecting with the substrate in a longitudinal and spiral pattern, and
• wherein the plurality of antenna segments are arranged such that the planar portions form the planar sections in a ring-like shape, wherein a current is individually flown to each of the plurality of antenna segments such that the current flows to the planar sections as a whole in the ring-like shape.

A method of performing an inductively coupled plasma processing using an inductively coupled plasma processing apparatus, the method comprising:

• performing an inductively coupled plasma processing on a substrate,
• wherein the inductively coupled plasma processing apparatus includes:
• a processing chamber configured to receive the substrate therein and configured to process the substrate with plasma;
• a mounting table on which the substrate is mounted and installed in the processing chamber;
• an antenna unit including an antenna configured to generate an inductively coupled plasma within the processing chamber;
• and
• a high frequency power supply unit configured to supply a high frequency power to the antenna,
• wherein the antenna includes planar sections which are formed to face the substrate and generate an induction electric field that contributes to generate the inductively coupled plasma,
• wherein a plurality of antenna segments having planar portions which form a portion of the planar sections are arranged to constitute the planar sections,
• wherein the antenna segments are constituted by winding an antenna line in a direction intersecting with the substrate in a longitudinal and spiral pattern, and
• wherein the plurality of antenna segments are arranged so that the planar portions are arranged in a grid pattern or a straight pattern and the planar sections are formed in a rectangular shape, wherein a current is individually flown to each of the plurality of antenna segments in parallel and in the same direction.