Loading patent…
AssigneeInternational Business Machines Corporation
InventorsJohn A. Fitzsimmons, Shyng-Tsong Chen, Brown C. Peethala, David L. Rath, Muthumanickam Sankarapandian, Oscar van der Straten
Estimating the term…
A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present disclosure decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.
A chemical composition for removing a metal hard mask and etching residues from a microelectronic device comprising:
A chemical composition for a stock solution for generating an etch solution for removal of a metallic material, the chemical composition comprising:
A method of removing a metal hard mask and etching residues from a microelectronic device comprising steps of:
A method of removing a metal hard mask and etching residues from a microelectronic device comprising steps of:
A method of forming a chemical solution, the method comprising dissolving at least one metal protectant in an aqueous solution including a pH stabilizer at a concentration greater than a solubility limit of the at least one metal protectant in deionized water to form a stock solution.
Dependencies are inferred from the claim text.