Flux Residue Cleaning System and Method

A flux residue cleaning system, comprising:

• a first immersion chamber configured to soften an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical;
• a first spray chamber configured to remove a portion of the outer region of the flux residue when the wafer is impinged upon by a first chemical spray;
• an additional first spray chamber configured to remove a further portion of the outer region of the flux residue when the wafer is impinged upon by an additional first chemical spray in order to expose an inner region of the flux residue;
• a second immersion chamber configured to soften the inner region of the flux residue formed around the microbumps interposed between the wafer and the die when the wafer is immersed in a second chemical;
• a second spray chamber configured to remove a portion of the inner region of the flux residue when the wafer is impinged upon by a second chemical spray;
• an additional second spray chamber configured to remove a further portion of the inner region of the flux residue when the wafer is impinged upon by an additional second chemical spray in order to clean the wafer;
• and
• a drying chamber configured to dry the wafer when the wafer is exposed to a flow of nitrogen.

A method of cleaning flux residue formed around microbumps interposed between a wafer and a die, comprising:

• softening an outer region of a flux residue formed around microbumps interposed between a wafer and a die by immersing the wafer in a first chemical in a first immersion chamber;
• removing the outer region of the flux residue by impinging a first chemical spray upon the wafer in a first spray chamber to expose an inner region of the flux residue;
• softening the inner region of the flux residue formed around microbumps interposed between the wafer and the die by immersing the wafer in a second chemical in a second immersion chamber;
• removing the inner region of the flux residue by impinging a second chemical spray upon the wafer in a second spray chamber in order to clean the wafer;
• and
• dry the wafer by exposing the wafer to a flow of nitrogen the wafer in the drying chamber.