Vertical Pressure Sensitive Structure

A method of manufacturing a pressure sensitive structure, the method comprising;

• generating openings in a substrate, the openings extending from a first main surface vertically into the substrate, wherein a wall extending vertically into the substrate is formed between at least one pair of adjacent openings;
• removing of further material at a lateral side of a first opening of the at least one pair of openings to laterally extend the first opening.

A device comprising;

• at least one sealed opening, the at least one sealed opening of the plurality of sealed openings extending from a main surface vertically into a substrate;
• a pressure membrane, the pressure membrane extending from said main surface vertically into the substrate;
• at least one further opening in the substrate extending from said main surface of the substrate into the substrate to provide a pressure communication for the pressure membrane.

A pressure sensitive device comprising:

• at least one sealed opening extending vertical from a main surface of a semiconductor substrate into the semiconductor substrate, the at least one sealed opening being bounded on one side by a pressure sensitive wall;
• and
• at least one pressure inlet, the at least one pressure inlet extending from the pressure sensitive wall to the main surface, the at least one pressure inlet being bound on an opposing side of the pressure sensitive wall by an inclined surface of the semiconductor substrate, the inclined surface being non-parallel to the pressure sensitive wall.