Electron beam irradiation method and scanning electronic microscope
AssigneeHitachi High-Technologies Corporation
InventorsKinya Kobayashi, Toshiyuki Yokosuka, Chahn Lee
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AssigneeHitachi High-Technologies Corporation
InventorsKinya Kobayashi, Toshiyuki Yokosuka, Chahn Lee
Estimating the term…
Provided is an electron beam scanning method for forming an electric field for appropriately guiding electrons emitted from a pattern to the outside of the pattern, and also provided is a scanning electron microscope. When an electron beam for forming charge is irradiated to a sample, a first electron beam is irradiated to a first position (1) and a second position (2) having the center (104) of a pattern formed on the sample as a symmetrical point, and is then additionally irradiated to two central positions (3, 4) between the first and second irradiation position, the two central positions (3, 4) being on the same radius centered on the symmetrical point as are the first and second positions. Further, after that, the irradiation of the first electron beam to the central positions between existing scanning positions on the radius is repeated.
An electron beam irradiation method in which a sample is irradiated with a first electron beam and charged and measurement or inspection of the sample is performed based on electrons obtained by scanning with a second electron beam to the charged sample, the method comprising the steps of:
A scanning electron microscope which comprises an electron source, a lens that converges an electron beam emitted from the electron source, and a deflector that deflects an irradiation position of an electron beam, comprising a controller that controls the deflector, the controller controlling the deflector so that a sample is irradiated with a first electron beam to charge a sample and scanning of a second electron beam onto the charged sample is performed, and the controller controlling the deflector so that the first electron beam is irradiated to a first position and a second position which have a pattern center of a pattern formed on the sample as a point of symmetry and the first electron beam is further irradiated after then to two center points between the first and second irradiation positions and on a same radius as the first and second positions with the point of symmetry as a center, and irradiation of the first electron beam to center points between positions already scanned on the radius is thereafter repeated further.
Dependencies are inferred from the claim text.