Pattern forming process and resist compostion
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsMasaki Ohashi, Jun Hatakeyama
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Abstract
A resist composition is provided comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group, an acid generator, a sulfonium or iodonium salt of fluoroalkanesulfonamide and an organic solvent. A positive pattern is formed by applying the resist composition onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and immersing in an alkaline developer to dissolve away the exposed region of resist film, but not the unexposed region.
Claims6
A pattern forming process comprising the steps of applying a resist composition onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and immersing in an alkaline developer to form a positive pattern wherein the exposed region of resist film is dissolved away, but not the unexposed region,
- the resist composition comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group and an acid generator, or a polymer comprising recurring units having a carboxyl group substituted with an acid labile group and recurring units capable of generating acid upon exposure, a sulfonium or iodonium salt of fluoroalkanesulfonamide, and an organic solvent.
A resist composition comprising a polymer, an acid generator, a sulfonium salt (Q1) or iodonium salt (Q2) of fluoroalkanesulfonamide, and an organic solvent,
- said polymer comprising acid labile group-substituted recurring units having the general formula (1):
- wherein R1 is hydrogen, fluorine, methyl or trifluoromethyl, Z is a single bond, phenylene, naphthylene or (backbone)-C(═O)—O—Z′—, Z′ is a straight, branched or cyclic C1-C10 alkylene group which may contain a hydroxyl radical, ether bond, ester bond, or lactone ring, or a phenylene or naphthylene group, and XA is an acid labile group,
- said sulfonium salt (Q1) or iodonium salt (Q2) of fluoroalkanesulfonamide having the general formula (4):
- wherein R101a, R101b and R101c are each independently a straight, branched or cyclic C1-C12 alkyl, alkenyl, oxoalkyl or oxoalkenyl group, a C6-C20 aryl group, or a C7-C12 aralkyl or aryloxoalkyl group, in which some or all hydrogen atoms may be substituted by an oxygen atom, oxycarbonyl, carbonyl, carbonate, hydroxyl, carboxyl, halogen atom, cyano, amino, amide, nitro, sulfonyloxy, sulfonyl, or sulfonium salt-containing substituent group, or R101b and R101c may bond together to form a ring with the sulfur atom to which they are attached, R101b and R101c stand for a mono- or polycyclic hydrocarbon group having 4 to 16 carbon atoms in total and optionally containing an oxygen or sulfur atom when they form a ring,
- R101d and R101e are each independently a C6-C20 aryl group which may have a straight, branched or cyclic C1-C6 alkyl or alkoxy radical, or R101d and R101e may bond together to form a ring with the iodine atom to which they are attached, R101d and R101e stand for a mono- or polycyclic hydrocarbon group having 4 to 16 carbon atoms in total when they form a ring,
- R14 is a straight, branched or cyclic C1-C10 alkyl group or alkenyl group, which has at least one fluorine atom, and
- R15 is hydrogen, or a straight, branched or cyclic C1-C20 alkyl group, straight, branched or cyclic C2-C12 alkenyl group or C6-C10 aryl group, which may have an ether bond, ester bond, carbonyl, amide, hydroxyl or carboxyl radical.
Dependencies are inferred from the claim text.