Power semiconductor module and method of manufacturing the same

A power semiconductor module of resin-sealed type, comprising:

• at least one unit structure including a plurality of semiconductor chips each having a first chip main surface and a second chip main surface, and a heat spreader having conductivity, to which said first chip main surfaces of said plurality of semiconductor chips are bonded with a first bonding member;
• an insulating member located on a side opposite to said plurality of semiconductor chips when viewed from said heat spreader;
• a plurality of electrodes including at least one first electrode bonded to said second chip main surfaces of predetermined chips among said plurality of semiconductor chips with a second bonding member, said plurality of electrodes being provided by a lead frame in which said plurality of electrodes are formed in advance;
• an insulating substrate including an insulating layer located on a side opposite to said plurality of semiconductor chips when viewed from said at least one first electrode, and a first conductive layer located between said insulating layer and said at least one first electrode and bonded to said at least one first electrode with a third bonding member;
• and
• a molding resin sealing said at least one unit structure and said plurality of electrodes in a state in which a surface of said insulating member on a side far from said plurality of semiconductor chips, a surface of said insulating substrate on the side far from said plurality of semiconductor chips, and external terminal portions of said plurality of electrodes are exposed.