High-performance heterostructure fet devices and methods

A heterostructure field effect transistor (HFET) with a layered structure comprising:

• a substrate;
• a first semiconductor oxide layer grown on the substrate;
• and
• a second semiconductor oxide layer grown on the first semiconductor oxide layer, wherein the energy band gap of the second semiconductor layer is larger than that of the first semiconductor layer.

A heterostructure field effect transistor (HFET) with a layered structure comprising:

• a substrate;
• a first semiconductor oxide layer grown on the substrate;
• and
• a second semiconductor oxide layer grown on the first semiconductor oxide layer, wherein the energy band gap of the second semiconductor layer is smaller than that of the first semiconductor layer.

A heterostructure field effect transistor (HFET) with a layered structure comprising:

• a first semiconductor oxide layer;
• a second semiconductor oxide layer grown on the first semiconductor oxide layer, wherein the energy band gap of the second semiconductor layer is larger than that of the first semiconductor layer;
• two ohmic contacts on the second semiconductor oxide layer to form respectively a source contact and a drain contact;
• and
• a gate contact on the second semiconductor layer located between the source contact and the drain contact.

A heterostructure field effect transistor (HFET) with a layered structure comprising:

• a first semiconductor oxide layer;
• a second semiconductor oxide layer grown on the first semiconductor oxide layer, wherein the energy band gap of the second semiconductor layer is smaller than that of the first semiconductor layer;
• two ohmic contacts on the second semiconductor oxide layer to form respectively a source contact and a drain contact;
• and
• a gate contact on the second semiconductor layer located between the source contact and the drain contact.