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US 2013/0171839 A1Published application
C-rich carbon boron nitride dielectric films for use in electronic devices
AssigneeInternational Business Machines Corporation
InventorsSon Van Nguyen, Alfred Grill, Thomas J. Haigh, JR., Sanjay Mehta
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Abstract
A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
Claims19
A method of forming a dielectric film comprising:
- providing a substrate into a reactor chamber;
- providing to the reactor chamber at least one precursor containing at least atoms of C, B and N;
- and
- depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
1 more element
A method of forming a dielectric film comprising:
- providing a substrate into a reactor chamber;
- providing to the reactor chamber at a combined boron and nitrogen containing liquid precursor and a hydrocarbon-containing gas precursor;
- and
- depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
1 more element
Dependencies are inferred from the claim text.