Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and non-transitory computer-readable recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorKazuyuki OKUDA
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Abstract
Provided is a method of manufacturing a semiconductor device capable of forming a nitride layer having high resistance to hydrogen fluoride at low temperatures. The method includes forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate, supplying a plasma-excited hydrogen-containing gas to the substrate, supplying a plasma-excited or thermally excited nitriding gas to the substrate, and supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate.
Claims18
A method of manufacturing a semiconductor device, the method comprising forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including:
- (a) supplying a source gas to the substrate;
- (b) supplying a plasma-excited hydrogen-containing gas to the substrate;
- (c) supplying a plasma-excited or thermally excited nitriding gas to the substrate;
- and
- (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate.
A method of processing a substrate comprising forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including:
- (a) supplying a source gas to the substrate;
- (b) supplying a plasma-excited hydrogen-containing gas to the substrate;
- (c) supplying a plasma-excited or thermally excited nitriding gas to the substrate;
- and
- (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate.
A substrate processing apparatus comprising:
- a process chamber configured to accommodate a substrate;
- a first gas supply system configured to supply a source gas to the substrate in the process chamber;
- a second gas supply system configured to supply a nitriding gas to the substrate in the process chamber;
- a third gas supply system configured to supply a hydrogen-containing gas to the substrate in the process chamber;
- a fourth gas supply system configured to supply at least one of nitrogen gas and a rare gas to the substrate in the process chamber;
- an excitation unit configured to plasma-excite or thermally excite a gas;
- and
- a control unit configured to control the first through fourth gas supply systems and the excitation unit so as to form a nitride film on the substrate by performing a cycle a predetermined number of times, the cycle including:
- (a) supplying the source gas to the substrate in the process chamber;
- (b) supplying the plasma-excited hydrogen-containing gas to the substrate in the process chamber;
- (c) supplying the plasma-excited or thermally excited nitriding gas to the substrate in the process chamber;
- and
- (d) supplying at least one of the plasma-excited nitrogen gas and the plasma-excited rare gas to the substrate in the process chamber.
A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
- (a) supplying a source gas to the substrate in a process chamber;
- (b) supplying a plasma-excited hydrogen-containing gas to the substrate in the process chamber;
- (c) supplying a plasma-excited or thermally excited nitriding gas to the substrate in the process chamber;
- and
- (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate in the process chamber.
Dependencies are inferred from the claim text.