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US 2013/0171837 A1Published application
Semiconductor process
AssigneeUnited Microelectronics Corp.
InventorsTe-Lin Sun, Chien-Liang Lin, Yu-Ren Wang, Ying-Wei Yen
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Abstract
A semiconductor process includes the following steps. A substrate having a recess is provided. A decoupled plasma nitridation process is performed to nitride the surface of the recess for forming a nitrogen containing liner on the surface of the recess. A nitrogen containing annealing process is then performed on the nitrogen containing liner.
Claims18
A semiconductor process, comprising:
- providing a substrate having a recess;
- performing a decoupled plasma nitridation process to nitride the surface of the recess for forming a nitrogen containing liner on the surface of the recess;
- and
- performing a nitrogen containing annealing process on the nitrogen containing liner.
1 more element
Dependencies are inferred from the claim text.