Semiconductor device production method and rinse
AssigneeMitsui Chemicals, Inc.
InventorsShoko Ono, Kazuo Kohmura, Hirofumi Tanaka
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AssigneeMitsui Chemicals, Inc.
InventorsShoko Ono, Kazuo Kohmura, Hirofumi Tanaka
Estimating the term…
The present invention provides a semiconductor device production method and a rinse used in the production method. The method includes: a sealing composition application process in which a semiconductor sealing layer is formed by applying, to at least a portion of a surface of a semiconductor substrate, a semiconductor sealing composition that includes a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, wherein a content of sodium and a content of potassium are 10 mass ppb or less on an elemental basis, respectively; and, subsequently, a rinsing process in which the surface of the semiconductor substrate on which the semiconductor sealing layer has been formed is rinsed with a rinse having a pH at 25° C. of 6 or lower.
A semiconductor device production method, the method comprising:
A rinse for removing a semiconductor sealing layer that is derived from a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, the semiconductor sealing layer being positioned on a metal wiring of a semiconductor circuit face or on a semiconductor substrate, and the rinse having a pH at 25° C. of 6 or lower.
Dependencies are inferred from the claim text.