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US 2013/0171823 A1Published application
CMP Slurry Composition and Polishing Method Using the Same
AssigneeCheil Industries Inc.
InventorsHyun Soo ROH, Dong Jin KIM, Yong Soon PARK, Yong Kuk KIM, Young Chul JUNG
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Abstract
A CMP slurry composition includes metal oxide particles, a diisocyanate compound, and deionized water. The CMP slurry composition is capable of selectively controlling polishing speed of a wafer surface having a convex portion and a concave portion, such that primary polishing and secondary polishing can be performed rapidly while stopping polishing of the nitride layer upon the secondary polishing.
Claims15
A CMP slurry composition comprising:
- metal oxide particles;
- a diisocyanate compound;
- and deionized water.
Dependencies are inferred from the claim text.