Method of fabricating metal contact using double patterning technology and device formed thereby

A method of fabricating a metal contact using double patterning technology, the method comprising:

• forming a first insulating layer on a target layer in which a cell region and a peripheral region are defined;
• forming a mask pattern on the first insulating layer, the mask pattern including a first opening formed in a string overhead area between two adjacent string selection lines of the cell region and a first hole formed in the peripheral region;
• forming a first sacrificial pattern having a line-&-space shape on the mask pattern of the cell region using a double patterning technology process;
• forming a first contact hole in the string overhead area of the cell region and forming a second contact hole in the peripheral region by etching the first insulating layer using the mask pattern and the first sacrificial pattern as a mask, the first contact hole defined by the first opening and corresponding to the first sacrificial pattern, the second contact hole corresponding to the first hole;
• and
• forming a metal contact connected to the target layer of the cell region and the peripheral region by filling the first and second contact holes with a metal material.