Methods for integration of metal/dielectric interconnects
AssigneeToshiba America Electronic Components, Inc.
InventorsHideshi Miyajima, Hideaki Masuda
Life of this patent
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Abstract
Described herein are methods for copper/low-k dielectric material integration. The methods involve depositing and curing a low-k dielectric material and depositing a mask on the low-k dielectric material. A via is patterned in the low-k dielectric material and a trench is patterned in the low-k dielectric material. After the via or trench is patterned, a portion of the low-k material is backfilled with a backfill material. The trench and via are filled with copper, then the mask and the copper filling the via are removed. After a first pre-CLN, the backfill material is removed. This creates a robust copper/porous low-k dielectric material interconnect.
Claims20
A method for copper/low-k dielectric material integration, comprising:
- depositing a mask on a low-k dielectric material, wherein the low-k dielectric material comprises pores;
- patterning a via;
- backfilling a portion of the pores of the low-k dielectric material;
- patterning a trench in the portion of the pores;
- filling the trench and the via with copper;
- removing the mask and the copper filling the via;
- and
- removing the backfill material.
A method for copper/low-k dielectric material integration, comprising:
- depositing a mask on a porous low-k dielectric material, wherein the porous low-k dielectric material comprises connecting pores;
- patterning a via;
- patterning a trench in the porous low-k dielectric material;
- backfilling a portion of the pores around the trench with a backfill material while leaving the rest of the pores unfilled;
- filling the trench and the via with copper;
- removing the mask and the copper filling the via;
- pre-cleaning and depositing a first cap;
- patterning the first cap;
- removing the backfill material;
- and
- depositing a second cap.
A method for copper/low-k dielectric material integration, comprising:
- depositing a mask on a low-k dielectric material, wherein the low-k dielectric material comprises pores;
- patterning a via in the mask;
- backfilling a portion of the low-k dielectric material with a backfill material;
- patterning a trench in the low-k dielectric material, the trench being formed in at least the portion of the pores;
- filling the trench and the via with copper;
- removing the mask and the copper filling the via;
- depositing a first cap;
- patterning the first cap;
- removing the backfill material;
- and
- depositing a second cap.
Dependencies are inferred from the claim text.