Method of Manufacturing A Semiconductor Device
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Bum Kim, Young-Pil Kim, Kwan-Heum Lee, Sun-Ghil Lee
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Abstract
In a method of forming an ohmic layer of a DRAM device, the metal silicide layer between the storage node contact plug and the lower electrode of a capacitor is formed as the ohmic layer by a first heat treatment under a first temperature and an instantaneous second heat treatment under a second temperature higher than the first temperature. Thus, the metal silicide layer has a thermo-stable crystal structure and little or no agglomeration occurs on the metal silicide layer in the high temperature process. Accordingly, the sheet resistance of the ohmic layer may not increase in spite of the subsequent high temperature process.
Claims17
A method of manufacturing a semiconductor device, comprising:
- forming an insulation interlayer on a substrate such that conductive structures on the substrate are covered with the insulation interlayer and a buried contact makes contact with the conductive structures through the insulation interlayer;
- forming a mold pattern on the insulation interlayer, the mold pattern having a node hole through which the buried contact covered with a metal silicide layer is exposed and the metal silicide layer being formed by a first heat treatment under a first temperature and a second heat treatment under a second temperature higher than the first temperature;
- forming a cylindrical node-separated lower electrode on a sidewall of the node hole and on the metal silicide layer in the node hole of the mold pattern;
- removing the mold pattern from the insulation interlayer, thereby exposing the cylindrical lower electrode;
- forming a dielectric layer such that the cylindrical lower electrode is covered with the dielectric layer;
- and
- forming an upper electrode on the dielectric layer.
12-15. (canceled)
A method of manufacturing a semiconductor device, comprising:
- forming a buried contact on a substrate;
- and
- forming a metal silicide layer on the buried contact;
- wherein forming the metal silicide layer comprises performing a first heat treatment of the metal silicide layer at a first temperature and performing a second heat treatment of the metal silicide layer at a second temperature greater than the first temperature, the second heat treatment being performed locally at the interface of the metal silicide layer with the buried contact.
Dependencies are inferred from the claim text.