Method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorSatoshi Torii
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes: forming a conductive film on a semiconductor substrate; patterning the conductive film in a memory region to form a first gate electrode; after forming the first gate electrode, forming a mask film above each of the conductive film in a logic region and the first gate electrode; removing the mask film in the logic region; forming a first resist film above the mask film left in the memory region and above the conductive film left in the logic region; and forming a second gate electrode in the logic region by etching the conductive film using the first resist film as a mask.
Claims17
A method of manufacturing a semiconductor device, the method comprising:
- forming a conductive film in a memory region and a logic region of a semiconductor substrate;
- forming a first gate electrode in the memory region by patterning the conductive film in the memory region while leaving the conductive film in the logic region;
- after forming the first gate electrode, forming a mask film above the conductive film left in the logic region, and above the first gate electrode;
- removing the mask film in the logic region;
- after removing the mask film in the logic region, forming a first resist film above the mask film left in the memory region, and above the conductive film left in the logic region;
- forming a second gate electrode in the logic region by etching the conductive film using the first resist film as a mask;
- removing the first resist film;
- and
- removing the mask film.
Dependencies are inferred from the claim text.