Field effect transistor device and fabrication
AssigneeInternational Business Machines Corporation
InventorsDechao Guo, Shu-Jen Han, Chung-Hsun Lin, Yanfeng Wang
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Abstract
A method for forming a field effect transistor (FET) device includes forming a dielectric layer on a substrate, forming a first metal layer on the dielectric layer, removing a portion of the first metal layer to expose a portion of the dielectric layer, forming a second metal layer on the dielectric layer and the first metal layer, and removing a portion of the first metal layer and the second metal layer to define a boundary region between a first FET device and a second FET device.
Claims7
A method for forming a field effect transistor (FET) device, the method comprising:
- forming a dielectric layer on a substrate;
- forming a first metal layer on a portion of the dielectric layer;
- forming a second metal layer on the dielectric layer and the first metal layer;
- forming a capping layer on the second metal layer;
- and
- removing a portion of the first metal layer and the second metal layer to expose a portion of the dielectric layer, the portion of the dielectric layer defining a boundary region between a first FET device and a second FET device.
Dependencies are inferred from the claim text.