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US 2013/0171811 A1Published application
Method for manufacturing compound semiconductor
AssigneePanasonic Corporation
InventorsASAMIRA SUZUKI, HIDEKAZU UMEDA, MASAHIRO ISHIDA, TETSUZO UEDA
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Abstract
In a method for manufacturing a compound semiconductor, a silicon oxide film is formed in an upper part of a substrate made of silicon. Subsequently, a base layer made of single crystal silicon to which ions are implanted is formed by performing ion implantation to a region of the substrate below the silicon oxide film and performing a thermal process. Then, the base layer is exposed by removing the silicon oxide film. Finally, a GaN layer is formed on the base layer.
Claims11
A method for manufacturing a compound semiconductor, the method comprising:
- a step (a) of forming a silicon oxide film in an upper part of a substrate made of silicon;
- a step (b) of forming, by performing ion implantation to a region of the substrate below the silicon oxide film and performing a thermal process, a base layer made of single crystal silicon to which ions are implanted;
- a step (c) of exposing the base layer by removing the silicon oxide film;
- and
- a step (d) of forming a semiconductor film on the base layer.
2 more elements
Dependencies are inferred from the claim text.