Method of Forming Top Electrode for Capacitor and Interconnection in Integrated Passive Device (IPD)

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first insulating layer over the substrate and first conductive layer;
• forming a second insulating layer over the first insulating layer;
• and
• forming a second conductive layer over the second insulating layer and in contact with the first insulating layer.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first insulating layer over the substrate and first conductive layer;
• forming a second insulating layer over the first insulating layer;
• and
• forming a second conductive layer over the second insulating layer and extending through the second insulating layer to the first insulating layer.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first insulating layer over the substrate and first conductive layer;
• forming a second insulating layer over the first insulating layer;
• and
• forming a second conductive layer over the second insulating layer and separated from the first conductive layer by the first insulating layer.