Method of manufacturing phase-change random access memory device
OwnerSeung Beom BAEK, Hyung Suk Leeinventors
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Abstract
A method of manufacturing a phase-change random access memory device. The method includes forming a word line on a semiconductor substrate, forming a switching element material and a hard mask material on the word line, etching the switching element material and the hard mask material to form a hole exposing the word line, forming an insulating material on a sidewall and a bottom of the hole, removing the hard mask material; and forming a heater material on the switching element material. The hard mask material has different etch selectivity from the insulating material.
Claims9
A method of manufacturing a phase-change random access memory device, comprising:
- forming a word line on a semiconductor substrate;
- forming a switching element material and a hard mask material on the word line;
- etching the switching element material and the hard mask material to form a hole exposing the word line;
- forming an insulating material on a sidewall and a bottom of the hole;
- removing the hard mask material;
- and
- forming a heater material on the switching element material,
- wherein the hard mask material has different etch selectivity from the insulating material.
A method of manufacturing a phase-change random access device, comprising:
- forming a word line on a semiconductor substrate;
- forming a switching element material on the word line;
- forming a hard mask on the switching element material;
- etching the switching element material using the hard mask as an etching barrier to form a switching element and
- forming a heater material on the switching element,
- wherein the hard mask includes silicon germanium (SiGe).
Dependencies are inferred from the claim text.