Method for forming multi-component layer, method for forming multi-component dielectric layer and method for fabricating semiconductor device

A method of forming a multi-component dielectric layer, the method comprising:

• injecting a cocktail source of a tantalum source having a cyclopentadienyl ligand and a zirconium source having a cyclopentadienyl ligand, wherein the cocktail source is adsorbed on a substrate by injecting the cocktail source;
• performing a first purge process to remove a non-adsorbed portion of the cocktail source;
• injecting an oxidant to react with the adsorbed cocktail source, wherein an oxide containing zirconium and tantalum is formed by the reaction between the oxidant and the absorbed cocktail source;
• and
• performing a second purge process to remove reaction byproducts and an unreacted portion of the oxidant.

A method for fabricating a capacitor, the method comprising:

• forming a storage node;
• reacting an oxidant with a cocktail source including a tantalum source having a cyclopentadienyl ligand and a zirconium source having a cyclopentadienyl ligand, wherein a first oxide layer containing zirconium and tantalum is formed over the storage node by the reaction between the oxidant and the cocktail source;
• and
• forming a plate over the first oxide layer.

A method for fabricating a transistor, the method comprising:

• adsorbing a cocktail source of a tantalum source having a cyclopentadienyl ligand and a zirconium source having a cyclopentadienyl ligand on a semiconductor substrate;
• reacting the cocktail source with an oxidant to form a gate insulating layer comprising an oxide layer containing zirconium and tantalum;
• and
• forming a gate electrode over the gate insulating layer.