Loading patent…
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
Estimating the term…
Methods for fabricating device structures, such as bipolar transistors and diodes. The method includes forming a trench extending through stacked semiconductor and insulator layers and into an underlying semiconductor substrate. The trench may be at least partially filled with a sacrificial plug containing a dopant with a conductivity type opposite to the conductivity type of the semiconductor substrate. Dopant is transported outwardly from the sacrificial plug into the semiconductor substrate surrounding the trench to define a doped region of the second conductivity type in the semiconductor substrate. A first contact is formed that extends through the semiconductor and insulator layers to a portion of the semiconductor substrate outside of the doped region. A second contact is formed that extends through the semiconductor and insulator layers to the doped region.
A method of fabricating a device structure using a semiconductor-on-insulator wafer that includes a semiconductor layer, a semiconductor substrate of a first conductivity type, and an insulator layer between the semiconductor layer and the semiconductor substrate, the method comprising:
A device structure for a diode fabricated using a silicon-on-insulator wafer having a semiconductor layer, a semiconductor substrate of a first conductivity type, and an insulator layer between the semiconductor layer and the semiconductor substrate, the device structure comprising:
Dependencies are inferred from the claim text.