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US 2013/0171792 A1Published application
Methods for Semiconductor Regrowth
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Tien Wan, You-Ru Lin, Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann
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Abstract
A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.
Claims20
A method comprising:
- performing a treatment on a surface of a first semiconductor region, wherein the treatment is performed using process gases comprising:
- an oxygen-containing gas;
- and
- an etching gas capable of etching the first semiconductor region;
- and
- performing an epitaxy to grow a second semiconductor region on the surface of the first semiconductor region.
3 more elements
A method comprising:
- etching a semiconductor substrate to form a recess, wherein the semiconductor substrate comprises a top surface in the recess;
- performing a treatment on the top surface, wherein the treatment is performed using process gases comprising:
- an oxygen-containing gas;
- and
- an etching gas capable of etching the semiconductor substrate;
- after the treatment, performing a cleaning on the top surface;
- and
- after the treatment, performing an epitaxy to grow a semiconductor region in the recess.
5 more elements
A method comprising:
- forming Shallow Trench Isolation (STI) regions extending from a top surface of a silicon substrate into the silicon substrate;
- etching a portion of the silicon substrate between opposite sidewalls of the STI regions to form a recess, wherein the silicon substrate comprises a top surface in the recess;
- performing a treatment on the top surface, wherein the treatment is performed using process gases comprising CF4 and O2;
- after the treatment, performing a cleaning on the top surface of the silicon substrate;
- and
- performing an epitaxy to grow a germanium-containing semiconductor region in the recess, wherein the germanium-containing semiconductor region is grown from the top surface in the recess.
3 more elements
Dependencies are inferred from the claim text.