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US 2013/0171781 A1Published application
Graphene electronic device and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsChang Seung Lee, Sang Wook Kim, Seong Jun Park, David Seo, Young Jun Yun, Yung Hee Lee
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Abstract
A method of manufacturing a graphene electronic device may include forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer, growing a graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.
Claims20
A method of manufacturing a graphene electronic device, the method comprising:
- forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer;
- growing a graphene layer on the catalyst layer;
- and
- converting the catalyst layer into a portion of the metal compound layer.
1 more element
A method of manufacturing a graphene electronic device, the method comprising:
- forming a first insulating layer on a first substrate;
- forming a catalyst layer on the first insulating layer, the catalyst layer including a metal element;
- forming a graphene layer on the catalyst layer to form a structure including the first substrate, the catalyst layer, and the graphene layer;
- attaching the structure to a second substrate such that the graphene layer is closer to the second substrate than the first substrate;
- removing the first insulating layer to separate the first substrate from the second substrate;
- and
- forming a metal compound layer by combining the metal element in the catalyst layer with another element.
4 more elements
A graphene electronic device comprising:
- a metal compound layer on a substrate;
- and
- a graphene layer on the substrate,
- wherein the metal compound layer includes a metal element configured to serve as a catalyst for growing the graphene layer.
1 more element
Dependencies are inferred from the claim text.