Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same
AssigneesIndustry-Academic Cooperation Foundation, Yonsei University, Samsung Display Co., Ltd.
InventorsYeon-Taek JEONG, Bo-Sung KIM, Doo-Hyoung LEE, Doo-Na KIM, Eun-Hye PARK, Dong-Lim KIM, Hyun-Jae KIM, You-Seung RIM, Hyun-Soo LIM
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Abstract
According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.
Claims20
A composition for manufacturing an oxide semiconductor comprising:
- a metal oxalate;
- and
- a solvent.
A composition for manufacturing an oxide semiconductor comprising:
- a metallic salt;
- an oxalic acid compound;
- and
- a solvent.
A method of manufacturing a thin film transistor substrate comprising a gate electrode, a semiconductor pattern, a source electrode and a drain electrode, the method comprising:
- coating a composition comprising a metal oxalate and a solvent on a substrate to form a thin film on the substrate;
- annealing the thin film;
- and
- patterning the thin film to form a semiconductor pattern.
Dependencies are inferred from the claim text.