US 2013/0171773 A1 · BONDED STRUCTURE EMPLOYING METAL SEMICONDUCTOR ALLOY BONDING

Abstract

Vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with vertical stacks of a metal portion and a semiconductor portion formed on a second substrate. Alternately, vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with metal portions formed on a second substrate. The assembly of the first and second substrates is subjected to an anneal at a temperature that induces formation of a metal semiconductor alloy derived from the semiconductor portions and the metal portions. The first substrate and the second substrate are bonded through metal semiconductor alloy portions that adhere to the first and second substrates.

Claims17

Dependent claims

A method of forming a bonded structure comprising:

forming first dielectric material portions on a surface of a first substrate;
forming material stacks of a first metal portion and a first semiconductor portion on said first substrate;
forming second dielectric material portions on a surface of a second substrate;
forming metal-containing material portions including at least a second metal portion on said second substrate;
and
bringing said material stacks and said metal-containing material portions into physical contact at an interface plane and annealing said first and second substrates, whereby metal semiconductor alloy portions are formed across said interface plane by conversion of materials of said material stacks and said metal-containing material portions into a metal semiconductor alloy.

3 more elements

Dependencies are inferred from the claim text.

Bonded structure employing metal semiconductor alloy bonding

Life of this patent

Bonded structure employing metal semiconductor alloy bonding

Life of this patent

Abstract

Claims17