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US 2013/0171772 A1Published application
Through-silicon via structure formation process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Chi LIN, Weng-Jin WU, Shau-Lin SHUE
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Abstract
In a process, an opening is formed to extend from a front surface of a semiconductor substrate through a part of the semiconductor substrate. A metal seed layer is formed on a sidewall of the opening. A block layer is formed on only a portion of the metal seed layer. A metal layer is formed on the block layer and the metal seed layer to fill the opening.
Claims20
A process, comprising:
- forming an opening extending from a front surface of a semiconductor substrate through a part of the semiconductor substrate;
- forming a metal seed layer on a sidewall of the opening;
- forming a block layer on only a portion of the metal seed layer;
- and
- forming a metal layer on the block layer and the metal seed layer to fill the opening.
2 more elements
A process, comprising:
- forming an opening extending from a front surface of a semiconductor substrate through a part of the semiconductor substrate;
- forming a metal seed layer on a sidewall of the opening;
- forming a block layer on the metal seed layer, wherein a bottom of the opening is free of the block layer;
- and
- plating a metal layer on the block layer and the metal seed layer to fill the opening;
- wherein the block layer comprises at least one of magnesium (Mg), iron (Fe), cobalt (Co), nickel (Ni), titanium (Ti), chromium (Cr), tantalum (Ta), tungsten (W), or cadmium (Cd).
3 more elements
A process, comprising:
- providing a semiconductor substrate having a front surface and a back surface;
- forming an opening extending from the front surface of the semiconductor substrate through at least a part of the semiconductor substrate, wherein the opening has an aspect ratio greater than 5;
- forming a metal seed layer in the opening, wherein the metal seed layer comprises a sidewall portion adjacent to the sidewall of the opening and a bottom portion adjacent to the bottom of the opening;
- forming a block layer on at least a part of the sidewall portion of the metal seed layer;
- and
- plating a metal layer on the block layer and the metal seed layer to fill the opening;
- wherein the block layer comprises at least one of magnesium (Mg), iron (Fe), cobalt (Co), nickel (Ni), titanium (Ti), chromium (Cr), tantalum (Ta), tungsten (W), or cadmium (Cd).
4 more elements
Dependencies are inferred from the claim text.