Ion implantation and annealing for high efficiency back-contact back-junction solar cells
AssigneeSolexel, Inc.
InventorsMehrdad M. Moslehi, Virendra V. Rana
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Abstract
A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation and annealing processes.
Claims37
A method for the formation of base regions for a back contact back junction thin-film crystalline silicon solar cell, the method comprising:
- forming openings in a dielectric layer for base contacts on a thin-film crystalline silicon substrate, wherein said openings form a patterned dielectric layer;
- implanting ions of an dopant element in said thin-film crystalline silicon substrate within said patterned dielectric layer to selectively introduce said dopant element at said base contacts, said patterned dielectric used as an ion implantation mask;
- activating said implanted dopant element to form electrically active doped base contacts
- forming emitter contacts on a thin-film semiconductor substrate;
- and
- forming metallization contacts on said emitter contacts and said base contacts.
A method for the formation of front surface field regions for a back contact back junction thin-film crystalline silicon solar cell, the method comprising:
- implanting dopant atoms on the front side of a thin-film crystalline silicon substrate;
- and
- activating said implanted ions using laser annealing to form doped front surface layer.
A method for the formation of selective emitter regions for a back contact back junction thin-film crystalline silicon solar cell, the method comprising:
- forming first openings for emitter contacts on a thin-film crystalline silicon substrate;
- selectively implanting ions of an dopant element in said thin-film crystalline silicon substrate at said emitter contacts;
- activating said implanted ions to form doped emitter contacts;
- and
- forming metallization contacts on said emitter contacts and said base contacts.
Dependencies are inferred from the claim text.