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US 2013/0171766 A1Published application
Annealing Methods for Backside Illumination Image Sensor Chips
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Ting Lin, Cheng-Jung Sung, Yu-Sheng Wang, Shiu-Ko JangJian, Wei-Ming You, Chih-Cherng Jeng, Ching-Hwanq Su
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Abstract
A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.
Claims20
A method comprising:
- performing a grinding on a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate comprises a back surface, and wherein an image sensor is disposed on a front side of the semiconductor substrate;
- doping an impurity into a surface layer of the backside of the semiconductor substrate to form a doped layer;
- and
- performing a multi-cycle laser anneal on the doped layer.
1 more element
A method comprising:
- performing a grinding on a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate comprises a back surface, and wherein an image sensor is disposed on a front side of the semiconductor substrate;
- performing a first laser anneal on the back surface;
- after the step of performing the first laser anneal, doping a p-type impurity into a surface layer of the backside of the semiconductor substrate to form a p-type layer;
- and
- after the step of doping, performing a second laser anneal on the back surface.
2 more elements
A method comprising:
- performing a grinding on a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate comprises a back surface, and wherein an image sensor is disposed on a front side of the semiconductor substrate;
- and
- performing a plurality of doping-annealing cycles on the back surface, wherein each of the plurality of doping-annealing cycles comprises:
- doping a p-type impurity into a surface layer of the backside of the semiconductor substrate to form a p-type layer;
- and
- after the step of doping, performing a laser anneal on the back surface.
3 more elements
Dependencies are inferred from the claim text.