Methods of thermally treating a semiconductor wafer
AssigneeSamsung Electronics Co., Ltd.
InventorsJONG-HOON KANG, Taegon Kim, Hanmei Choi, Eunyoung Jo, Gonsu Kang, Sungho Kang, Sungho Heo
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Abstract
A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.
Claims16
A method of thermally treating a wafer, comprising:
- loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient;
- detecting a defect in the wafer;
- aligning the wafer to position the defect within one of the one or more regions of uniform temperature gradient;
- and
- performing a rapid thermal process on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.
A method of thermally treating a wafer, comprising:
- loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient;
- detecting a crystal direction of the wafer;
- aligning the wafer such that the crystal direction of the wafer faces toward one of the one or more regions of uniform temperature gradient of the process chamber;
- and
- performing a rapid thermal process on the wafer in the process chamber while the crystal direction of the wafer faces towards the one of the one or more regions of uniform temperature gradient of the process chamber.
16-20. (canceled)
Dependencies are inferred from the claim text.